Semiconductor component used as a rectifier comprises a semiconductor chip, an anode, a cathode, a first layer section, a second layer section and a third layer section arranged parallel to each other; a cathode layer and a drift layer

摘要

Semiconductor component comprises a semiconductor chip with a first and second main surface; an anode (4) on the first main surface; a cathode (5) on the second main surface; a first layer section, a second layer section and a third layer section arranged parallel to each other; a cathode layer (3) and a drift layer (2). The first layer section has an anode layer (1) which is doped more strongly than the drift layer and is in contact with the anode. The second layer section further comprises a Schottky transition (7) between the drift layer and the anode. The third layer section has an insulating film (6) between the drift layer and the anode. Preferred Features: The insulating film is a silicon oxide film or polyimide film.