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Monolithic integrated drive circuit for high-side switch has drive transistor with source connected to ground, and drain formed by substrate of semiconductor body
Monolithic integrated drive circuit for high-side switch has drive transistor with source connected to ground, and drain formed by substrate of semiconductor body
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机译:用于高端开关的单片集成驱动电路,其驱动晶体管的源极接地,漏极由半导体本体的衬底形成
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摘要
An input connection (IN) receives an input signal (IS), and an output connection (OUT) provides an input-signal dependent output signal (OS) for driving the high-side switch (TH). A drive transistor (TA) has a gate (G) connected to the input (IN), a drain (D) formed by the substrate of a semiconductor body, and a source (S) connected to the ground terminal (GND). A drive circuit has supply connections (12,14) for applying a supply potential, an output (18) at which the output signal (OS) is available, and an input (16) which is connected to the drain of the drive transistor. The drive transistor is typically a vertical high-voltage MOSFET. An Independent claim is also included for a load-switching circuit using the drive circuit.
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