首页> 外国专利> Monolithic integrated drive circuit for high-side switch has drive transistor with source connected to ground, and drain formed by substrate of semiconductor body

Monolithic integrated drive circuit for high-side switch has drive transistor with source connected to ground, and drain formed by substrate of semiconductor body

机译:用于高端开关的单片集成驱动电路,其驱动晶体管的源极接地,漏极由半导体本体的衬底形成

摘要

An input connection (IN) receives an input signal (IS), and an output connection (OUT) provides an input-signal dependent output signal (OS) for driving the high-side switch (TH). A drive transistor (TA) has a gate (G) connected to the input (IN), a drain (D) formed by the substrate of a semiconductor body, and a source (S) connected to the ground terminal (GND). A drive circuit has supply connections (12,14) for applying a supply potential, an output (18) at which the output signal (OS) is available, and an input (16) which is connected to the drain of the drive transistor. The drive transistor is typically a vertical high-voltage MOSFET. An Independent claim is also included for a load-switching circuit using the drive circuit.
机译:输入连接(IN)接收输入信号(IS),输出连接(OUT)提供与输入信号有关的输出信号(OS),用于驱动高端开关(TH)。驱动晶体管(TA)具有连接到输入(IN)的栅极(G),由半导体本体的基板形成的漏极(D)和连接到接地端子(GND)的源极(S)。驱动电路具有用于施加电源电位的电源连接(12,14),在其上可获得输出信号(OS)的输出(18)和连接至驱动晶体管的漏极的输入(16)。驱动晶体管通常是垂直高压MOSFET。对于使用驱动电路的负载切换电路也包括独立权利要求。

著录项

  • 公开/公告号DE10146168A1

    专利类型

  • 公开/公告日2003-04-24

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2001146168

  • 发明设计人 FELDTKELLER MARTIN;

    申请日2001-09-19

  • 分类号H03K17/06;H01L27/088;

  • 国家 DE

  • 入库时间 2022-08-21 23:42:39

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