Field effect transistor used in power amplifiers consists of a doubled heterostructure consisting of a channel layer made from gallium nitride, a covering layer and a rear side barrier layer having a higher band gap than gallium nitride

摘要

Field effect transistor consists of a doubled heterostructure consisting of a channel layer (4) made from gallium nitride, a covering layer (5) and a rear side barrier layer (6) having a higher band gap than gallium nitride. Preferred Features: The rear side barrier layer is made from aluminum gallium nitride or indium gallium nitride. The aluminum content of the rear side barrier layer is a maximum of 5 %. The thickness of the channel layer is adjusted so that the thickness of the charge carrier in the second channel does not exceed 10 % of the thickness in the upper channel.