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Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region
Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region
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机译:具有包括高浓度杂质区的宽带隙势垒层的氮化物半导体异质结场效应晶体管
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摘要
The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero-junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0x1) formed on a substrate, an AlyGa1-yN barrier layer with a composition of Al being y (0y≦1) formed on the channel layer, and source/drain electrodes and a gate electrode formed on the barrier layer, wherein the composition ratio y is larger than the composition ratio x.
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机译:本发明的目的是提供一种能够获得高输出和高击穿电压的异质结场效应晶体管的半导体器件及其制造方法。本发明是一种异质结型场效应晶体管的半导体装置,其具有Al的组成比为Al(x)的Al x Sub> Ga 1-x Sub> N沟道层。在衬底上形成0 y Sub> Ga 1-y Sub> N势垒层,其中Al的成分为y(0 展开▼