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SEMICONDUCTOR DEVICE ANALYZER AND ANALYZING METHOD

机译:半导体器件分析仪和分析方法

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device analyzer which can accurately analyze a minute structure at the bottom of a hole having a large aspect ratio.;SOLUTION: A substrate current measuring device 100 measures a substrate current which is generated while an electron beam is radiated to the hole which is formed in a semiconductor substrate mounted on a moving stage 102. The measured data of the substrate current are stored in a storage 107 with the data of an irradiating position. A correction processor 108 corrects the fluctuated part of the substrate current depending on the aspect ratio. A computing part 109 refers a reference data base 110 and computes the boundary position and the film thickness of a residual film of the corrected minute structure at the bottom of the hole. Based on the computed result, a display control unit 111 displays an image of the bottom of the hole on a display unit 112.;COPYRIGHT: (C)2004,JPO&NCIPI
机译:解决的问题:提供一种半导体器件分析仪,其可以精确地分析具有大的长径比的孔的底部的微小结构。解决方案:衬底电流测量设备100测量在电子束的作用下产生的衬底电流。辐射形成在安装在移动台102上的半导体衬底上形成的孔中。衬底电流的测量数据与辐照位置的数据一起存储在存储器107中。校正处理器108根据纵横比校正基板电流的波动部分。计算部分109参考参考数据库110,并且计算孔的底部处的校正后的微小结构的残余膜的边界位置和膜厚度。基于计算的结果,显示控制单元111在显示单元112上显示孔的底部的图像。版权所有:(C)2004,JPO&NCIPI

著录项

  • 公开/公告号JP2004235464A

    专利类型

  • 公开/公告日2004-08-19

    原文格式PDF

  • 申请/专利权人 FAB SOLUTION KK;

    申请/专利号JP20030022525

  • 发明设计人 ITAGAKI YOSUKE;USHIKI TAKEO;YAMADA KEIZO;

    申请日2003-01-30

  • 分类号H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-21 23:34:27

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