首页> 外国专利> EVALUATING METHOD FOR CHARACTERISTICS OF SEMICONDUCTOR LASER DEVICE, TEST DEVICE FOR CHARACTERISTICS OF SEMICONDUCTOR LASER DEVICE, AND SEMICONDUCTOR LASER DEVICE

EVALUATING METHOD FOR CHARACTERISTICS OF SEMICONDUCTOR LASER DEVICE, TEST DEVICE FOR CHARACTERISTICS OF SEMICONDUCTOR LASER DEVICE, AND SEMICONDUCTOR LASER DEVICE

机译:半导体激光装置特性的评估方法,半导体激光装置特性的测试装置和半导体激光装置

摘要

PROBLEM TO BE SOLVED: To provide an evaluating method for characteristics of a semiconductor laser device, a test method for characteristics of a semiconductor laser device which can accurately evaluate magnitude of return optical noise.;SOLUTION: A laser beam is made incident on a CD 6 from a semiconductor laser device 1 through a collimator lens 2, a beam splitter 4, and an object lens 3, an optical signal including recording information of the CD6 reflected by this CD 6 is converted to an electric signal by a multi-division receiving element 8. The magnitude of return light noise of the semiconductor laser device is evaluated by a signal processor based on an average value and the maximum value of RF signals taken out from this electric signal.;COPYRIGHT: (C)2004,JPO
机译:要解决的问题:要提供一种半导体激光器件特性的评估方法,一种能精确评估返回光噪声幅度的半导体激光器件特性的测试方法;解决方案:使激光束入射到CD上如图6所示,从半导体激光装置1经过准直透镜2,分束器4和物镜3,通过该多区域接收将包括由该CD 6反射的CD6的记录信息的光信号转换成电信号。元素8.半导体激光器的回波噪声的大小由信号处理器根据从该电信号中取出的RF信号的平均值和最大值进行评估。版权所有:(C)2004,JPO

著录项

  • 公开/公告号JP2004047013A

    专利类型

  • 公开/公告日2004-02-12

    原文格式PDF

  • 申请/专利权人 SHARP CORP;

    申请/专利号JP20020205739

  • 发明设计人 YAMADA SHIGEHIRO;

    申请日2002-07-15

  • 分类号G11B7/125;

  • 国家 JP

  • 入库时间 2022-08-21 23:33:05

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号