PLASMA TREATMENT APPARATUS, SUBSTRATE TREATMENT METHOD FOR THE SAME, AND PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM, AND FILM MAKING METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which can make the film thickness distribution of the material on a substrate uniform, a substrate treatment method for the same, a plasma chemical vapor deposition system and a film making method for the same.;SOLUTION: In depositing a desired material by evaporation on the surface of the substrate 3, the high-frequency electric power which is the same in frequencies and is changed in phase differences with lapse of time is supplied from two power sources to ladder electrodes 2 to promote the uniformization of the film thickness distribution in a power feed direction. The impedance matching between respective coaxial cables and the power feed points of the ladder electrodes corresponding thereto is regulated by branch cables 22 arranged at the coaxial cables for supplying the high-frequency electric power to the electrodes 2 so as to make the film thicknesses in the direction perpendicular to the power feed direction uniform, thereby regulating the high-frequency electric power fed to the respective vertical electrode rods 2a of the electrodes 2, balancing the voltage distribution in the lateral section of the substrate and the voltage distribution of the central section of the substrate and eliminating the unbalances of the local film thickness distribution occurring in the deviations of the voltage distribution on the electrodes 2. The distribution characteristics of the film thicknesses at the large-area substrate are thus improved.;COPYRIGHT: (C)2004,JPO