首页> 外国专利> GRINDING COMPOSITION AND SILICON WAFER GRINDING METHOD EMPLOYING THE SAME, AS WELL AS RINSING COMPOSITION AND SILICON WAFER RINSING METHOD EMPLOYING THE SAME

GRINDING COMPOSITION AND SILICON WAFER GRINDING METHOD EMPLOYING THE SAME, AS WELL AS RINSING COMPOSITION AND SILICON WAFER RINSING METHOD EMPLOYING THE SAME

机译:采用相同的研磨组成和硅晶片研磨方法,以及采用相同的研磨组成和硅晶片研磨方法

摘要

PROBLEM TO BE SOLVED: To provide a grinding composition and a silicon wafer grinding method employing the same which improves a haze level much more, as well as a rinsing composition and a silicon wafer rinsing method employing the same.;SOLUTION: The grinding compound contains (a) hydroxyethyl cellulose, (b) 0.005-0.5 wt% of polyethylene oxide, (c) alkaline compound, (d) water and (e) silicon dioxide. In this case, the grinding composition is constituted so as to be used in a grinding process for the purpose of improving the haze level of surface of the silicon wafer when the grinding is applied on the surface of the silicon wafer by dividing it into a plurality of stages. The rinsing composition contains respective constituents of (a), (b), (c) and (d), and is constituted so as to be used for rinse applied on the surface of the silicon wafer after the grinding process.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种研磨组合物和使用该研磨组合物的硅晶片研磨方法,其可进一步改善雾度,以及一种冲洗组合物和一种使用该组合物的硅晶片冲洗方法。 (a)羟乙基纤维素,(b)0.005-0.5wt%的聚环氧乙烷,(c)碱性化合物,(d)水和(e)二氧化硅。在这种情况下,构成磨削组合物以便在磨削过程中使用,以通过将磨削组合物分成多个部分而将其施加在硅晶片的表面上来改善硅晶片表面的雾度。阶段。漂洗组合物包含(a),(b),(c)和(d)的各个成分,并且构成为用于在研磨工艺之后用于施加在硅晶片的表面上的漂洗。 C)2004,日本特许厅

著录项

  • 公开/公告号JP2004128089A

    专利类型

  • 公开/公告日2004-04-22

    原文格式PDF

  • 申请/专利权人 FUJIMI INC;

    申请/专利号JP20020287979

  • 发明设计人 IWASA SHOJI;

    申请日2002-09-30

  • 分类号H01L21/304;B24B37/00;C09K3/14;

  • 国家 JP

  • 入库时间 2022-08-21 23:28:56

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