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Semiconductor testing method and semiconductor testing apparatus for semiconductor devices, and program for executing semiconductor testing method

机译:半导体装置的半导体测试方法,半导体测试装置以及执行该半导体测试方法的程序

摘要

In the present invention, plural test vectors are supplied to good and faulty samples as semiconductor devices in order to measure current values, and change rates of the current values corresponding to each test vector are calculated. The change rates of the current values in the good and faulty samples are then compared, and address pairs of test vectors to be used in a pass/fail decision for semiconductor devices are determined based on the comparison results. Test vectors to be used for performing an emission analysis are obtained based on the change rates of the current values obtained from the good and faulty samples. The obtained test vectors are supplied to the faulty sample in order to perform the emission analysis, in which emission patterns of the good and faulty samples are compared, by using an emission microscope, and a part of a defect in the faulty sample is detected.
机译:在本发明中,将多个测试向量提供给作为半导体器件的好坏样本以测量电流值,并且计算与每个测试向量相对应的电流值的变化率。然后,比较好样本和故障样本中电流值的变化率,并根据比较结果确定用于半导体器件通过/不通过决策的测试向量的地址对。基于从良品和不良品样本获得的电流值的变化率,获得用于进行排放分析的测试矢量。将获得的测试矢量提供给有缺陷的样品,以进行排放分析,其中通过使用发射显微镜比较好样品和有缺陷样品的发射模式,并检测出有缺陷样品中的部分缺陷。

著录项

  • 公开/公告号US6810344B1

    专利类型

  • 公开/公告日2004-10-26

    原文格式PDF

  • 申请/专利权人 KABUSHIKI KAISHA TOSHIBA;

    申请/专利号US20000708490

  • 发明设计人 CHIE IWASA;

    申请日2000-11-09

  • 分类号G11C114/00;

  • 国家 US

  • 入库时间 2022-08-21 23:19:01

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