Light emitting device using GaN series III-V group nitride semiconductor material and method for manufacturing the same

摘要

PURPOSE: A GaN semiconductor LED(Light Emission Diode) is provided to improve manufacturing processes and a manufacturing time by performing only one wire bonding in packaging step due to a structure of the LED. CONSTITUTION: A GaN semiconductor LED comprises an active layer(56) for emitting light, a first and a second electrodes(50,64) fronting each other using the active layer(56) as a center portion, a first compound semiconductor layer(54) located between the active layer(56) and the first electrode(50), a second compound semiconductor layer(58) located between the active layer(56) and the second electrode(64) for fronting with the first compound semiconductor layer(54) using the active layer(56) as a center portion, and a high resistible substrate(60) for contacting the first compound semiconductor layer(54) with the first electrode(50). At this point, the fronting structure of the first and second electrodes(50,64) makes a manufacturing process simple and a manufacturing time reduced due to one wire bonding.