METHOD FOR FORMING FINE PATTERN AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME TO OBTAIN FINE PHOTORESIST PATTERN HAVING CD(CRITICAL DIMENSION) OF 100NM AND BELOW

摘要

PURPOSE: A method for forming a fine pattern and a manufacturing method of a semiconductor device using the same are provided to overcome resolution limit and to obtain a fine photoresist pattern having CD(Critical Dimension) of 100§^ and below. CONSTITUTION: A mask layer is formed on a substrate(100) having an insulating layer(120). The first mask pattern with a space of the first size is formed by patterning the mask layer, wherein the first size is larger than a predetermined size(DL). The second mask pattern with a space of the second size smaller than the first size is formed by annealing the first mask pattern. A polymer layer is formed on the second mask pattern. The third mask pattern(146) with same space as the predetermined size is formed by reacting the second mask pattern to the polymer layer.