NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE FOR REDUCING VARIATION OF WRITING CHARACTERISTICS OF MONOS MEMORY CELLS AND SEMICONDUCTOR IC DEVICE

摘要

PURPOSE: A non-volatile semiconductor memory device for reducing variation of writing characteristics of MONOS(Metal Oxide Nitride Oxide Semiconductor) memory cells and a semiconductor IC device are provided to reduce a variation of threshold voltages of non-volatile memory cells by controlling the current flowing in an object non-volatile memory cell to write data therein. CONSTITUTION: A non-volatile semiconductor memory device includes any one of a current supply control transistor formed between a voltage source and a non-volatile memory cell and a current absorption control transistor formed between the non-volatile memory cell and reference potential. The current supply control transistor or the current absorption control transistor is operated in a current saturation area denoted by current-voltage characteristics, thereby controlling a current that flows in the non-volatile memory cell at a data writing process.