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FULLY-DEPLETED-COLLECTOR SILICON-ON-INSULATOR(SOI) BIPOLAR TRANSISTOR USEFUL ALONE OR IN SOI BiCMOS
FULLY-DEPLETED-COLLECTOR SILICON-ON-INSULATOR(SOI) BIPOLAR TRANSISTOR USEFUL ALONE OR IN SOI BiCMOS
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机译:单独使用或在SOI BiCMOS中使用全耗尽集电器绝缘硅(SOI)双极晶体管
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摘要
A bipolar transistor structure is described incorporating an emitter, base, and collector having a fully depleted region on an insulator of a Silicon-On-Insulator (SOI) substrate without the need for a highly doped subcollector to permit the fabrication of vertical bipolar transistors on semiconductor material having a thickness of 300 nm or less and to permit the fabrication of SOI BiCMOS. The invention overcomes the problem of requiring a thick semiconductor layer in SOI to fabricate vertical bipolar transistors with low collector resistance.
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