METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH CORROSION-FREE METAL LINE AND DEFECT-FREE VIA HOLE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent the corrosion of a metal line and the defect of a via hole due to the moisture contained in an SOG(Spin On Glass) layer by forming a second IMO(InterMetal Oxide) made of TEOS(TetraEthylOrtho Silicate) oxide layer on a first IMO made of SiO2-Si3N4 instead of an SOG layer forming process. CONSTITUTION: A first IMO(13) is formed on a semiconductor substrate(11) with a lower metal line(12). The first IMO is planarized. A second IMO(14) is formed on the first IMO. A via hole for exposing the lower metal line to the outside is formed by performing selectively photo-etching on the second and first IMOs. An upper metal line(15) for contacting the lower metal line is formed on the second IMO.