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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH CORROSION-FREE METAL LINE AND DEFECT-FREE VIA HOLE
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH CORROSION-FREE METAL LINE AND DEFECT-FREE VIA HOLE
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机译:用无孔金属线和无孔金属制造半导体器件的方法
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摘要
PURPOSE: A method of manufacturing a semiconductor device is provided to prevent the corrosion of a metal line and the defect of a via hole due to the moisture contained in an SOG(Spin On Glass) layer by forming a second IMO(InterMetal Oxide) made of TEOS(TetraEthylOrtho Silicate) oxide layer on a first IMO made of SiO2-Si3N4 instead of an SOG layer forming process. CONSTITUTION: A first IMO(13) is formed on a semiconductor substrate(11) with a lower metal line(12). The first IMO is planarized. A second IMO(14) is formed on the first IMO. A via hole for exposing the lower metal line to the outside is formed by performing selectively photo-etching on the second and first IMOs. An upper metal line(15) for contacting the lower metal line is formed on the second IMO.
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机译:用途:提供一种半导体器件的制造方法,以防止形成金属层腐蚀,从而防止由于形成第二层IMO(金属间氧化物)而导致SOG(玻璃上旋涂)层中所含的水分引起的通孔缺陷。在由SiO 2 -Si 3 N 4制成的第一IMO上制造TEOS(原硅酸四乙酯)氧化物层,而不是形成SOG层。组成:第一个IMO(13)用下部金属线(12)形成在半导体衬底(11)上。第一个IMO被平面化。在第一个IMO上形成第二个IMO(14)。通过在第二和第一IMO上选择性地进行光蚀刻来形成用于将下部金属线暴露于外部的通孔。在第二IMO上形成用于与下部金属线接触的上部金属线(15)。
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