首页> 外国专利> Short-circuit cut-off circuit for MOSFET switch, has device which places gate voltage of MOSFET switch at zero volts for short time to effect complete switch-off

Short-circuit cut-off circuit for MOSFET switch, has device which places gate voltage of MOSFET switch at zero volts for short time to effect complete switch-off

机译:MOSFET开关的短路切断电路,具有将MOSFET开关的栅极电压短时置于零伏以实现完全关断的装置

摘要

The gate of the MOSFET switch (T1) is driven by an integrated circuit (1), and the source and drain are connected to a load (RL) and voltage source (Ub) respectively. The gate of the MOSFET switch is connected via a switch (S1) to a device (12) which places the gate voltage of the MOSFET at 0 V for a short time, to effect a complete switch-off of the MOSFET switch.
机译:MOSFET开关(T1)的栅极由集成电路(1)驱动,其源极和漏极分别连接到负载(RL)和电压源(Ub)。 MOSFET开关的栅极通过开关(S1)连接到设备(12),该设备将MOSFET的栅极电压短时间置于0 V,以实现MOSFET开关的完全关断。

著录项

  • 公开/公告号DE10243571A1

    专利类型

  • 公开/公告日2004-04-01

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2002143571

  • 发明设计人 TIHANYI JENOE;

    申请日2002-09-19

  • 分类号H03K17/082;H02H7/20;H02H3/08;

  • 国家 DE

  • 入库时间 2022-08-21 22:43:53

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