METHOD FOR SECOND PROCESS POLISHING IN COPPER CMP USING POLISHING FLUID NOT CONTAINING OXIDANT

摘要

PROBLEM TO BE SOLVED: To provide an adequate second process polishing fluid not containing an oxidant and having low abrasive grain density.;SOLUTION: The polishing fluid does not contain an oxidant but contains an organic acid, abrasive grains, and a copper corrosion inhibitor, in some cases and is for second process barrier removal polishing in copper chemical mechanical polishing (CMP). The fluid exhibits a high selection ratio for a barrier for metal and a barrier for an insulating layer.;COPYRIGHT: (C)2005,JPO&NCIPI