NITRIDING STI (SHALLOW-TRENCH ISOLATION) LINER OXIDE FOR REDUCING INFLUENCE OF CORNER DEVICE GIVEN TO PERFORMANCE OF PERPENDICULAR-TYPE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a structure for a perpendicular-type DRAM capable of being integrated into a process flow, using a flat surface device.;SOLUTION: A method of manufacturing an integrated circuit device comprises steps of etching a trench in a substrate; and forming DRAM cells which include a build-up capacitor 24 at a lower edge and a perpendicular-type MOSFET having a gate conductor 30 covering the build-up capacitor 24 and a boron doped channel. The method further comprises a step of forming a trench adjacent to the DRAM cells and a silicon acid nitriding isolation liner at either side of the DRAM cells. Next, an isolation region is formed in the trench at either side of the DRAM cells. Thereafter, the DRAM cells, including a boron-containing channel region are exposed to a high temperature caused by heat treatment to form a supporting device and so on. A nitride containing isolation liner reduces the isolation of boron in a channel region as compared with an oxide-containing isolation liner essentially without nitrogen.;COPYRIGHT: (C)2005,JPO&NCIPI