MANUFACTURING METHOD OF SILICON CARBIDE SMOOTHED SUBSTRATE, SILICON CARBIDE SMOOTHED SUBSTRATE, SILICON CARBIDE EPITAXIAL WAFER, GALLIUM NITRIDE WAFER, AND SEMICONDUCTOR MANUFACTURING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide smoothed substrate to be used in manufacturing an epitaxial wafer participating in the crystal growth of silicon carbide, and to provide the silicon carbide smoothed substrate, a silicon carbide epitaxial wafer, a gallium nitride wafer and a semiconductor manufacturing device.;SOLUTION: In the manufacturing method of the silicon carbide smoothed substrate of this invention, a raw material gas (silane) is added during hydrogen etching in smoothing of a silicon carbide substrate.;COPYRIGHT: (C)2006,JPO&NCIPI