Ultra Large Scale Manufacturing Challenges of Silicon Carbide and Gallium Nitride Based Power Devices and Systems

摘要

Both silicon carbide (SiC) and gallium nitride (GaN) have the potential of developing transformative power electronics for future needs. The defect density of current devices is quite high and only niche applications will continue to evolve unless major changes are made in the manufacturing process. In this paper we have proposed advanced process control (APC) based single wafer processing (SWP) tools for manufacturing SiC and GaN power devices. New manufacturing tools have the potential of realizing full potential of these materials.