SINGLE CRYSTAL SAPPHIRE SUBSTRATE FOR SEMICONDUCTOR ELEMENT, ITS MANUFACTURING METHOD AND GaN SYSTEM SEMICONDUCTOR LIGHT EMITTING ELEMENT AS WELL AS GaN SYSTEM SEMICONDUCTOR WHITE LIGHT EMITTING ELEMENT EMPLOYING THE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To manufacture a white color LED excellent in color rendering properties, by a method wherein a plurality of etch pits are formed on the sapphire substrate containing chromium or chromium and titanium, then, a GaN system LED is formed on the substrate to efficiently enter light, radiated out of the LED, into the sapphire substrate side to take out the light through the sapphire substrate and, further, a fluorescent body is installed at least on the LED or the side surface of the same.;SOLUTION: A plurality of etch pits are formed on the sapphire substrate, which is doped with chromium or chromium and titanium, to form the LED by growing a GaN system semiconductor crystal layer while the fluorescent body is installed at least on the LED or the side surface of the same.;COPYRIGHT: (C)2005,JPO&NCIPI