GaN SINGLE CRYSTAL SUBSTRATE, METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL SUBSTRATE, LIGHT-EMITTING ELEMENT MANUFACTURED ON GaN SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING THE LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a GaN single crystal substrate which has a wide area and little warp and is self-supportable; and to provide a method for manufacturing the same.;SOLUTION: The GaN single crystal substrate has a diameter of ≥20 mm and a thickness of ≥0.07 mm, and is self-supportable and characterized in that the angle formed by the normal line of a polished substrate surface and the normal line of the crystal plane of a low plane index having highest parallelism with the polished substrate surface is ≤3° in the substrate, at least one surface is polished, and the content of carbon contained in the crystal is a background level of the analysis.;COPYRIGHT: (C)2009,JPO&INPIT