GaN SINGLE CRYSTAL SUBSTRATE, METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL SUBSTRATE, LIGHT EMITTING ELEMENT FORMED ON GaN SINGLE CRYSTAL SUBSTRATE, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a GaN single crystal substrate which is wide in area, has reduced warping, and is self-supportable.;SOLUTION: A mask having a zigzagged window and a striped window is formed on the GaAs (111) substrate. A GaN buffer layer is then formed at low temperature by an HVPE (hydride vapor phase epitaxy) method or MOC (metal organic chloride) method and a GaN epitaxial layer is formed at high temperature by the HVPE method and the GaAs substrate is removed. GaN is thickly deposited by the HVPE method with the self-supporting film of GaN as a seed crystal to produce a GaN ingot. This ingot is cut by a slicer and is polished and thereby the transparent and colorless GaN wafer having the reduced warping is created.;COPYRIGHT: (C)2006,JPO&NCIPI