SINGLE CRYSTAL SAPPHIRE SUBSTRATE FOR SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, GaN SEMICONDUCTOR LIGHT-EMITTING DEVICE USING ITS SUBSTRATE AND GaN SEMICONDUCTOR WHITE-LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To manufacture a white LED having an excellent color rendering in such a manner that a plurality of irregularities are formed on a sapphire substrate containing chromium or chromium and titanium, a GaN LED is prepared on the substrate, a light is extracted through the sapphire substrate by efficiently projecting a light emitted from the LED to the sapphire substrate side, and a phosphor is mounted on at least the upper section or side face section of the LED.;SOLUTION: A plurality of irregularities are formed on the sapphire substrate, to which chromium or chromium and titanium are doped. A GaN semiconductor crystal layer is grown and the LED is prepared. The phosphor is fitted to at least the upper section or side face section of the LED.;COPYRIGHT: (C)2005,JPO&NCIPI