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Self-supporting GaN substrate, method of manufacturing GaN single crystal, method of manufacturing semiconductor device, and GaN layer bonding substrate and method of manufacturing the same
Self-supporting GaN substrate, method of manufacturing GaN single crystal, method of manufacturing semiconductor device, and GaN layer bonding substrate and method of manufacturing the same
An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0 × 10 -5 Å or less is observed.
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