Method of manufacturing a semiconductor light-emitting device substrate, a method of manufacturing a semiconductor light emitting device, and, GaN-based semiconductor light-emitting element

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing the substrate for semiconductor light-emitting element on which a high efficiency semiconductor light-emitting element can be manufactured, and to provide a method of manufacturing a semiconductor light-emitting element, and a GaN-based semiconductor light-emitting element.SOLUTION: A mask layer (12) having a plurality of openings at an average pitch of 10-1000 nm is provided on one principal surface of a substrate (11). An uneven structure (13) is formed on one principal surface of the substrate (11) by dry etching the substrate (11) from one principal surface side provided with the mask layer (12), and an impurity layer (21) capturing the gaseous species of dry etching gas used in the dry etching is formed on the surface layer of the uneven structure (13). A substrate for semiconductor light-emitting element is obtained by treating the substrate (11) with an acidic treatment solution containing a peroxide, thereby removing the impurity layer (21).