SAPPHIRE SUBSTRATE FOR SEMICONDUCTOR ELEMENT, ITS MANUFACTURING METHOD, GaN SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND GaN SEMICONDUCTOR WHITE EMITTING LIGHT ELEMENT

摘要

PROBLEM TO BE SOLVED: To manufacture a white LED which displays excellent color rendering properties through the manner wherein a GaN LED is formed on a chrome-containing sapphire substrate subjected to a flip-chip mounting process, enables light to be extracted through the sapphire substrate, and furthermore is provided with a fluorescent substance installed at least on the top or side of the LED.;SOLUTION: A GaN semiconductor crystal layer is grown on the sapphire substrate doped with chrome for the formation of the LED, the LED is mounted in a flip chip mounting manner, and light is extracted through the substrate.;COPYRIGHT: (C)2005,JPO&NCIPI