首页> 外国专利> METHOD OF CLEANING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING CLEANING SOLUTION, METHOD AND DEVICE OF CLEANING APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF CLEANING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING CLEANING SOLUTION, METHOD AND DEVICE OF CLEANING APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

机译:半导体装置的清洗方法,清洗液的制造方法,半导体装置的清洗装置的方法及装置

摘要

PROBLEM TO BE SOLVED: To provide a method of cleaning a semiconductor device, a method and a device of cleaning an apparatus for manufacturing the semiconductor device capable of precisely removing a contaminated metal remained on the surface, rear face, and /or end face of the semiconductor device including a metal used in a damascene process, moreover the inner face of the device of manufacturing the semiconductor device, the face of the apparatus for manufacturing the semiconductor device, etc. and abrasive slurry used for CMP.;SOLUTION: A semiconductor device is brought into contact with a nonmetallic cyanic compound containing solution or a cyanic compound containing alcohol base solution to remove a heavy metal in a surface region. After that, the cleaning treatment of the semiconductor device is performed, and thereby, the contaminated metal that is attached to the semiconductor device is formed into a compound with cyanogen or a complex with the cyanic compound. Then, it is removed together with cleaning treatment liquid, and thereby the cleaning and stabilization of the same surface can be easily attained without etching the surface of the semiconductor device.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种清洁半导体器件的方法,一种清洁该半导体器件的装置的方法以及一种清洁该器件的装置,该装置能够精确地去除残留在金属表面,背面和/或端面上的污染金属。半导体器件包括镶嵌工艺中使用的金属,此外,该半导体器件制造设备的内表面,半导体器件制造设备的表面等,以及用于CMP的磨料浆。使该装置与含非金属氰化物的溶液或含氰化物的醇碱溶液接触,以除去表面区域中的重金属。之后,执行半导体器件的清洁处理,从而将附着到半导体器件的被污染的金属形成为具有氰化物的化合物或与氰化物的络合物。然后,将其与清洗处理液一起除去,从而可以容易地实现同一表面的清洗和稳定化,而无需蚀刻半导体器件的表面。;版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005039198A

    专利类型

  • 公开/公告日2005-02-10

    原文格式PDF

  • 申请/专利权人 JAPAN SCIENCE & TECHNOLOGY AGENCY;

    申请/专利号JP20040092281

  • 发明设计人 KOBAYASHI HIKARI;

    申请日2004-03-26

  • 分类号H01L21/304;H01L21/3205;H01L27/14;

  • 国家 JP

  • 入库时间 2022-08-21 22:28:56

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