Functional water solutions to enable wet cleaning process for leading edge semiconductor device manufacturing(PPT)

摘要

Summary:1.HKMG patterning:Incase HKMG patterning required to suppress La2O3,ud-NH4OH rinsing could preserve the La2O3 layer.Meantime,removal La2O3,CO2W rinsing is preferred.2.Co surface cleaning in the MOL and BEOL: ud-APM successfully passivates the Co surface,resulting in negligible Co loss during the wafer rinsing step.3.Controlled Co recess for SAGC and FSAV: Fully functional water digital etching could demonstrate atomic scale etching of Co.