Cleaning solution for photoresist patterns used for manufacture of semiconductor device, comprises water as solvent, and surfactant of phosphate-alcohol amine salt as an additive

摘要

A cleaning solution for photoresist patterns comprises water as a solvent; and surfactant of phosphate-alcohol amine salt as an additive. A cleaning solution for photoresist patterns comprises water as a solvent; and a compound formula R-[-O-(-CH 2-) a-]-O-P(O)(OH)-O -NH +[-CH 2-(-CH 2-) x-OH][-CH 2-(-CH 2-) y-OH][-CH 2-(-CH 2-) z-OH] (1) as a surfactant. R : 2-20C alkyl or 6-25C alkyl aryl; x,y,z : 0-10; a : 2-3; b : 2-50. Independent claims are also included for: (1) formation of a photoresist pattern, comprising preparing a semiconductor substrate on which an underlying layer is formed; coating a photoresist on the underlying layer to form a photoresist film; exposing the photoresist film to light; developing the exposed photoresist film; and cleaning the resulting structure using the cleaning solution; and (2) a semiconductor device manufactured by the method.