PHOTORESIST STRIPPER COMPOSITION COMPRISING WATER-SOLUBLE ORGANIC AMINE COMPOUND, PROTIC ALKYLENE GLYCOL MONOALKYL ETHER COMPOUND, POLAR APROTIC SOLVENT, STRIPPING ACCELERATOR AND CORROSION INHIBITOR, STRIPPING METHOD OF PHOTORESIST USING THE COMPOSITION AND LCD DEVICE OR SEMICONDUCTOR DERIVE PREPARED BY USING THE METHOD

摘要

PURPOSE: Provided are a photoresist stripper composition which is suitable for both dipping method and single wafer treatment method, can strip the photoresist layer modified by an etching process at a low temperature for a short time and does not damage a conductive layer and an insulating layer comprising copper or copper alloy even without using isopropanol as a neutral cleaning solution, a stripping method of photoresist using the composition and a liquid crystal display device or semiconductor device prepared by the method. CONSTITUTION: The photoresist stripper composition comprises 5-50 wt% of a water-soluble organic amine compound; 20-70 wt% of a protic alkylene glycol monoalkyl ether compound having a boiling point of 150 deg.C or more; 0.01-70 wt% of a polar aprotic solvent; 0.01-5 wt% of at least one kind of stripping accelerator selected from the group consisting of the compounds represented by the formula 1; and 0.01-5 wt% of at least one kind of corrosion inhibitor selected from the group consisting of the compounds represented by the formula 2, wherein R1 is H or a C1-C4 alkyl group; R2 and R3 are independently a C1-C4 hydroxyalkyl group; R4 and R5 are independently H or OH; and R6 is H, a t-butyl group or a carboxyl group. Preferably the water-soluble organic amine compound is at least one selected from the group consisting of a primary aminoalcohol, a secondary aminoalcohol and a tertiary aminoalcohol.