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The single transistor which uses chemical mechanical grinding the production methodological null single transistor
The single transistor which uses chemical mechanical grinding the production methodological null single transistor
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机译:采用化学机械研磨的单晶体管的生产方法学无效的单晶体管
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摘要
A method of constructing a single-transistor ferroelectric memory (FEM) cell includes: preparing a silicon substrate for construction of a FEM gate unit; forming gate, source and drain regions on the silicon substrate; forming a nitride layer over the structure to a predetermined thickness equal to a specified thickness for a bottom electrode of the FEM gate unit; forming a first insulating layer over the structure; chemically-mechanically polishing the first insulating layer such that the top surface thereof is even with the top of the nitride layer; forming the bottom electrode for the FEM cell; and chemically-mechanically polishing the bottom electrode such that the top surface thereof is even with the top surface of the first insulating layer. Additional layers are formed and polished, depending on the specific final configuration of the FEM cell. IMAGE
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