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Wafer-applied underfill process

机译:晶圆应用的底部填充工艺

摘要

A process for underfilling a bumped die surface using a lamination step and compound film such that solder bumps on the die are exposed during lamination. The compound film comprises a first layer containing an underfill material and a second layer on the first layer. The underfill material and the second layer comprise polymer materials that differ from each other. The compound film is laminated to the die, preferably at the wafer level, so that the underfill material is forced between the solder bumps and fills spaces between the bumps but does not cover the bumps. In contrast, the second layer covers the solder bumps, but is then selectively removed to re-expose the solder bumps and the underfill material therebetween.
机译:一种使用层压步骤和复合膜未充分填充有凸点的芯片表面的工艺,以便在层压期间裸露芯片上的焊料凸点。复合膜包括含有底层填充材料的第一层和在第一层上的第二层。底部填充材料和第二层包括彼此不同的聚合物材料。将复合膜层压到管芯上,最好是在晶片层上,以便将底部填充材料压入焊料凸块之间,并填充凸块之间的空间,但不覆盖凸块。相反,第二层覆盖焊料凸块,但是随后被选择性地去除以重新暴露焊料凸块和其间的底部填充材料。

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