Semiconductor device with gate electrode formed on each of three side surfaces of an active layer, and manufacturing method thereof

摘要

A semiconductor device includes an active layer having a first side surface, a second side surface perpendicular to the first side surface and a third side surface opposite to the second side surface, a first gate electrode arranged on the first side surface with a first gate insulating film disposed therebetween, a second gate electrode formed of a material different from that of the first gate electrode and arranged on the second side surface with a second gate insulating film disposed therebetween, and a third gate electrode formed of a material different from that of the first gate electrode and arranged on the third side surface with a third gate insulating film disposed therebetween.