MULTILAYER GATE ELECTRODE AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE WITH MULTILAYER GATE ELECTRODE FORMED THEREIN AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide: a stable multilayer gate electrode in which the characteristics, such as resistance, have been improved, at high temperatures and with high reliability; a semiconductor including the same; a method for manufacturing a multilayer gate electrode; and a method for manufacturing a semiconductor device.;SOLUTION: The multilayer gate electrode includes: a polycrystal semiconductor film formed on a gate insulating film and doped with conductive impurities; an ohmic contact film formed on the polycrystal semiconductor film and including tungsten (W1-x) and non-tungsten metal (Mx, x=0.01 to 0.55); a metal barrier film formed on the ohmic contact film; and a high-melting-point metal film formed on the metal barrier film.;COPYRIGHT: (C)2007,JPO&INPIT