首页> 外文会议>IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies >Fabrication of Barium Strontium Titanate Films Directly on Copper Electrodes by Aerosol Deposition Method for Multilayer Dielectric Devices
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Fabrication of Barium Strontium Titanate Films Directly on Copper Electrodes by Aerosol Deposition Method for Multilayer Dielectric Devices

机译:用于多层电介质装置的气溶胶沉积方法直接在铜电极上制造钛酸钡膜的制造

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We demonstrate a preparation of polycrystalline barium strontium titanate (Ba{sub}xSr{sub}(1-x)TiO{sub}3, BST) films directly on base metal copper electrodes using aerosol deposition method (ADM) at room-temperature and explore metal Cu thin films on glass substrate. The dielectric constant of the as-deposited Ba{sub}xSr{sub}(1-x)TiO{sub}3 film were 100, 201, and 72 at x = 1.0, 0.6, 0.4, respectively. After annealing in N{sub}2 gas ambient at 500°C, the dielectric constant of the film on the Cu electrode were 190, 400, and 170 at x = 1.0, 0.6, 0.4, respectively. At the BST(x=0.6) film annealed at more than 400°C, a high tunability of 30% can be obtained at an applied electric field of 150 kV cm{sup}(-1). Moreover, as-deposited BST (x=0.6) film even showed a tunability of 15%. The Cu films deposited by AD method on the glass substrate showed a volume resistivity of 1.3×10{sup}(-4)Ωcm at as-deposited state and 4.5×10{sup}(-6)Ωcm after vacuum annealing at 300°C, respectively.
机译:我们证明了在室温下使用气溶胶沉积法(ADM)的基础金属铜电极直接在基础金属铜电极上的多晶钡锶(Ba {ul XSR {Sub}(1-x)TiO} 3,BST)薄膜的制备。探索玻璃基板上的金属Cu薄膜。 AS沉积的BA {Sub} XSR {Sub}(1-X)TiO {Sub} 3膜的介电常数分别为100,20,60,0.6,0.4分别为100,20,20.4。在500℃下在N {亚} 2气体环境中退火后,Cu电极上的膜的介电常数分别为190,400和170,分别在X = 1.0,0.6,0.4处。在BST(X = 0.6)膜上在超过400℃的情况下退火,可以在150kVcm {sup}( - 1)的施加电场上获得30%的高可调性。此外,沉积的BST(x = 0.6)薄膜甚至显示出15%的可调性。在玻璃基板上沉积的Cu膜在玻璃基板上沉积在玻璃基板上的体积电阻率为1.3×10 {sup}( - 4)Ωcm,在300°下真空退火后4.5×10 {sup}( - 6)ωcm C分别。

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