首页> 外国专利> Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer

Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer

机译:形成包括介电层的钛酸钡锶钡的化学气相沉积方法,包括该层中钡和锶的浓度变化的层

摘要

The invention a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer having a varied concentration of barium and strontium, and/or titanium, within the layer. A substrate is positioned within a chemical vapor deposition reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Titanium is provided within the reactor. One or more oxidizers are flowed to the reactor. In one aspect, conditions are provided within the reactor to be effective to deposit a barium strontium titanate comprising dielectric layer on the substrate from the reactants.
机译:本发明的化学气相沉积方法形成了钛酸钡锶钡,该钛酸锶钡包括介电层,该介电层在层内具有钡和锶和/或钛的浓度变化。将衬底放置在化学气相沉积反应器内。通过使至少一种金属有机前体流到反应器中,在反应器内提供钡和锶。在反应器内提供钛。一种或多种氧化剂流入反应器。一方面,在反应器内提供有效地从反应物上将包括介电层的钛酸钡锶钡沉积在基板上的条件。

著录项

  • 公开/公告号US2004185177A1

    专利类型

  • 公开/公告日2004-09-23

    原文格式PDF

  • 申请/专利权人 BASCERI CEM;ALZOLA NANCY;

    申请/专利号US20040769149

  • 发明设计人 CEM BASCERI;NANCY ALZOLA;

    申请日2004-01-30

  • 分类号C23C16/06;

  • 国家 US

  • 入库时间 2022-08-21 23:21:58

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