METHOD FOR MANUFACTURING A SHALLOW TRENCH ISOLATION LAYER

摘要

The present invention as an etching process using the cell trenches, in particular a hard mask is formed, and forming a first Mott pattern a first width defined on the film, and the first Mott pattern on a semiconductor substrate by a method of manufacturing a device isolation film the hard mask is patterned film, and removing the first Mott pattern after etching to a predetermined depth within the cell trenches set the semiconductor substrate below and surrounding the upper side of the hard mask pattern in the resulting second width defining a second forming a Mott pattern, and the second by the etching process using a Mott pattern etched to a depth of the trench cell is set to the semiconductor substrate to remove the second Mott pattern after forming a trench cell with a step. Therefore, the present invention can prevent cell trenches and trench and the trench corner entrance of voids generated in the element-isolating film becomes gaeppil characteristics are excellent by the hard mask layer with a step edge.