Production of a very thin layer of a first material on a final substrate using a thick layer transfer thinned by implantation and fracture, notably for silicon on insulator structures

摘要

The production of a thin layer of a first material on a final substrate of a second material comprises: (a) fixing a thick layer of the first material on the final substrate along an interface; (b) implanting a gaseous species in the thick layer of first material to create a fragile zone delimiting, between the interface and the fragile zone, the thin layer; (c) depositing on the thick layer of first material a layer of a third material as a self-carrying layer; (d) fracturing the structure made up of the final substrate, the thick layer of first material and the layer of third material, at the level of the fragile zone to provide the substrate supporting the thin layer.