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Semiconductor integrated circuit incorporating logic gates and with protection against reverse engineering using transistors without supplementary treatment circuits

机译:带有逻辑门的半导体集成电路,并使用没有辅助处理电路的晶体管进行反向工程保护

摘要

Semiconductor integrated circuit comprises: (a) a logic gate and a part for protection against reverse engineering that modifies the apparent Boolean functions of the logic gate, this protective part incorporating at least one PMOS transistor (P11) that remains in a state of constant unblocking or blocking independently of an input signal (A) applied to its grid; (b) at least one NMOS transistor (N11) that remains in a state of constant unblocking or blocking independently of an input signal applied to its grid; (c) the PMOS and NMOS transistors are included in the transistors forming the logic gate. An independent claim is also included for the protection against reverse engineering of an integrated circuit incorporating several logic gates.
机译:半导体集成电路包括:(a)逻辑门和用于防止逆向工程的部分,该部分修改了逻辑门的表观布尔函数,该保护部分包含至少一个保持恒定解锁状态的PMOS晶体管(P11)或独立于施加到其电网的输入信号(A)进行阻塞; (b)至少一个NMOS晶体管(N11),保持独立于施加到其栅极的输入信号的恒定解锁或阻断状态; (c)在形成逻辑门的晶体管中包括PMOS和NMOS晶体管。还包括独立权利要求,以防止包含多个逻辑门的集成电路的反向工程。

著录项

  • 公开/公告号FR2858113A1

    专利类型

  • 公开/公告日2005-01-28

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO LTD;

    申请/专利号FR20040008074

  • 发明设计人 KIM JONG CHEOL;

    申请日2004-07-21

  • 分类号H01L23/58;H01L27/02;

  • 国家 FR

  • 入库时间 2022-08-21 21:58:27

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