Production Engineering Measures (Pem) for Microelectronic Circuitry and Milliwatt Logic Semiconductor Integrated Circuits

摘要

Devices showing considerable improvement in diode leakage were produced during the third quarter. Increased temperature stabilization of the material brought the diode leakages down to less than 10 uuamp for the standard gate and power gate. Additional gold doping decreased the propagation delay on the standard gate from 25 nsec to 12 nsec at 125C. Delay elements which met specifications were also shipped. Additional gold doping will be incorporated to decrease storage time. Activities in the Material Preparation area centered around evaluation of the 'Common Carrier'. Improvements were made in several operations in the Bar Preparation and Assembly Areas and improvement programs were begun in the functional probe and bar mount operation. The automatic switching time test station was completed and turned over to Manufacturing. (Author)