METHOD OF USING TUNNEL MAGNETORESISTANCE EFFECT ELEMENT, SENSOR DEVICE HAVING TUNNEL MAGNETORESISTANCE ELEMENT AND MAGNETIC DISK DRIVE DEVICE HAVING TUNNEL MAGNETORESISTANCE EFFECT READ-OUT HEAD ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of using a TMR element which can prolong the lifetime of the element, a sensor device having the TMR element, and a magnetic disk drive device having a TMR read-out head element; and to provide a method of using the TMR element which can improve the yield in the manufacture of the TMR element.;SOLUTION: When it is detected that the barrier layer of the TMR element is defective, a voltage higher than a bias voltage is applied to this TMR element to short-circuit the barrier layer, and thereafter, the TMR element is used as the GMR element of a CPP structure.;COPYRIGHT: (C)2006,JPO&NCIPI