TUNNEL MAGNETORESISTANCE EFFECT ELEMENT AND MANUFACTURING METHOD THEREFOR, AND TUNNEL MAGNETORESISTANCE EFFECT HEAD AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a tunnel magnetoresistance effect element, a tunnel magnetoresistance effect head and manufacturing methods therefor, which provides a high TMR ratio and low resistance at room temperature and allows the thickness of the tunnel barrier layer to be reduced, as compared with the conventional cases.;SOLUTION: A TMR element 70 has a laminated structure of a first ferromagnetic layer 24, a tunnel barrier layer 30 and a second ferromagnetic layer 42 laminated in this order. The tunnel barrier layer 30 is made to contain nickel chrome oxide NiCrOx, etc.;COPYRIGHT: (C)2002,JPO