TUNNEL MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, BUILT-IN MEMORY, AND METHOD FOR MANUFACTURING TUNNEL MAGNETORESISTANCE EFFECT ELEMENT

摘要

A TMR element (1) that comprises: a magnetic tunnel junction element part (2); and a side wall part (17) that includes an insulating material and is provided to a side surface of the magnetic tunnel junction element part. The magnetic tunnel junction element part has: a reference layer (3); a free magnetization layer (7); a tunnel barrier layer (5) that is laminated in a lamination direction between the reference layer and the free magnetization layer; and a cap layer (9) that is laminated on the opposite side of the free magnetization layer from the tunnel barrier layer. The side wall part has a first region (R1) that includes the insulating material and covers a side surface of the reference layer, the tunnel barrier layer, the free magnetization layer, and/or the cap layer of the magnetic tunnel junction element part. The first region contains at least one of the elements (except oxygen) that constitute the reference layer, the tunnel barrier layer, the free magnetization layer, and/or the cap layer of the magnetic tunnel junction element part.