TUNNEL MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND BUILT-IN MEMORY

摘要

A TMR element includes a reference layer, a tunnel barrier layer, a perpendicular magnetization inducing layer, and a magnetization free layer stacked along a stack direction between the tunnel barrier layer and the perpendicular magnetization inducing layer. The perpendicular magnetization inducing layer imparts magnetic anisotropy along the stack direction to the magnetization free layer. The width of the magnetization free layer is smaller than any of the width of the tunnel barrier layer or the width of the perpendicular magnetization inducing layer.