SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE DEVICE, REPRODUCING METHOD FOR FERROELECTRIC CAPACITOR, INITIALIZING METHOD FOR FERROELECTRIC MEMORY DEVICE, AND DISCARDING METHOD FOR FERROELECTRIC MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a ferroelectric memory device, semiconductor package device, reproducing method for a ferroelectric capacitor, initializing method for the ferroelectric memory device, and discarding method for the ferroelectric memory device in which hysteresis characteristics can be easily recovered, and information held in the ferroelectric memory device can be erased even without operating a memory circuit.;SOLUTION: A ferroelectric memory device 100 includes a ferroelectric capacitor 100C, and wiring 200 for heat generation disposed near the ferroelectric capacitor 100C.;COPYRIGHT: (C)2007,JPO&INPIT