CMP SLURRY, CHEMICAL MECHANICAL POLISHING METHOD USING CMP SLURRY, AND METHOD OF FORMING SURFACE OF CAPACITOR USING CHEMICAL MECHANICAL POLISHING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a CMP slurry, a chemical mechanical polishing method utilizing the CMP slurry, and a method of forming a surface of a capacitor utilizing the chemical mechanical polishing method.;SOLUTION: The CMP slurry is provided with an abrasive, an oxidant, and at least one pH regulant which regulates pH of the CMP slurry.;COPYRIGHT: (C)2006,JPO&NCIPI