首页> 外国专利> SLURRY FOR CHEMICAL AND MECHANICAL POLISHING (CMP), METHOD OF PRODUCING SEMICONDUCTOR DEVICE, APPARATUS FOR PRODUCING SEMICONDUCTOR DEVICE AND METHOD OF HANDLING CMP SLURRY

SLURRY FOR CHEMICAL AND MECHANICAL POLISHING (CMP), METHOD OF PRODUCING SEMICONDUCTOR DEVICE, APPARATUS FOR PRODUCING SEMICONDUCTOR DEVICE AND METHOD OF HANDLING CMP SLURRY

机译:用于化学和机械抛光的浆液,制造半导体器件的方法,用于生产半导体器件的装置以及处理CMP浆液的方法

摘要

PROBLEM TO BE SOLVED: To provide a CMP slurry that can achieve high accurate polishing at a high polishing rate and can be easily stored and readily scrapped, a method of handling the slurry, a method of producing semiconductor devices using the same and an apparatus for producing semiconductor devices by using the same.;SOLUTION: The CMP slurry 7 comprises the dispersion medium 25, the polishing particles 18 which are dispersed in the dispersion medium 25 and develop photocatalytic action, when light is radiated and a nonionic surfactant dissolved in the dispersion medium 25.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:为了提供一种能够以高抛光速率实现高精度抛光并且易于存储和容易报废的CMP浆料,该浆料的处理方法,使用该浆料的半导体装置的制造方法以及用于该装置的设备SOLUTION:CMP浆料7包含分散介质25,抛光颗粒18,当辐射光时,抛光颗粒18分散在分散介质25中并产生光催化作用,并且非离子表面活性剂溶解在分散体中25 .;版权:(C)2003,日本特许厅

著录项

  • 公开/公告号JP2003113370A

    专利类型

  • 公开/公告日2003-04-18

    原文格式PDF

  • 申请/专利权人 TOSHIBA CORP;

    申请/专利号JP20020089951

  • 申请日2002-03-27

  • 分类号C09K3/14;B24B37/00;B24B57/02;H01L21/304;

  • 国家 JP

  • 入库时间 2022-08-22 00:17:06

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