首页> 外国专利> Amplifier circuit having improved linearity and frequency band using multiple gated transistor

Amplifier circuit having improved linearity and frequency band using multiple gated transistor

机译:使用多栅极晶体管具有改善的线性度和频带的放大器电路

摘要

Disclosed herein is an amplifier circuit having improved linearity and frequency band using a MGTR. The amplifier circuit comprises an amplification unit including a main transistor and an auxiliary transistor, an attenuation unit including inductors respectively connected to the source of the main transistor and the source of the auxiliary transistor, a capacitor connected at one end thereof to the sources of the main transistor and auxiliary transistor and connected at the other end thereof to the gates of the main transistor and-auxiliary transistor, and an output unit connected to the drains of the main transistor and auxiliary transistor.
机译:本文公开了一种使用MGTR具有改善的线性度和频带的放大器电路。放大电路包括:放大单元,其包括主晶体管和辅助晶体管;衰减单元,其包括分别连接到主晶体管的源极和辅助晶体管的源极的电感器;电容器,其一端连接到主晶体管和辅助晶体管的源极。主晶体管和辅助晶体管,其另一端连接到主晶体管和辅助晶体管的栅极,输出单元连接到主晶体管和辅助晶体管的漏极。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号