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Frequency reconfigurable narrow-band low noise amplifiers using CMOS-MEMSRF circuits passives for multi-band receivers.

机译:使用CMOS-MEMSRF电路无源的频率可重构窄带低噪声放大器,用于多频带接收器。

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摘要

Monolithic RF circuits capable of operating over multiple frequency bands are highly desired due to popular demand for low cost and compact multiband radios. This thesis presents designs of one such RF circuit called LNA. The presented LNAs are frequency reconfigurable tuned amplifiers i.e. they are narrow band circuits whose frequency of operation can be dynamically changed. The frequency reconfigurability is achieved by the use of monolithic CMOS-MEMS passives.;All the circuits have been designed in Jazz 0.35 microm 60 GHz BiCMOS process. The presented LNAs consume a mere 2.5 mW of power and deliver a NF under 3 dB. The performance of the LNAs presented in this thesis has also been compared, using a FOM (= S21/(NF* Power)), with the frequency reconfigurable LNAs reported in the literature so far. Based on this FOM the presented LNAs are better compared to the LNAs from even more advanced Si based technologies.;In this thesis all the possible configurations obtained by adding a single varactor to the input and the output of an emitter degenerated cascode LNA core has been analyzed. Low noise, low power, input match, frequency reconfigurability, and monolithic implementation were the main constraints to determine the acceptability of an configuration. Three acceptable configurations have been identified and circuit designs based on these configurations has been presented. Circuits have been designed using a methodology developed during this work. The methodology designs for good noise and power matching at the input, over the entire frequency range of operation, and under a DC power constraint.
机译:由于对低成本和紧凑型多频带无线电的普遍需求,迫切需要能够在多个频带上工作的单片RF电路。本文提出了一种称为LNA的此类RF电路的设计。提出的LNA是频率可重新配置的调谐放大器,即它们是窄带电路,其工作频率可以动态更改。频率可重构性是通过使用单片CMOS-MEMS无源器件实现的。所有电路均采用Jazz 0.35微米60 GHz BiCMOS工艺设计。提出的LNA仅消耗2.5 mW的功率,并提供3 dB以下的NF。还使用FOM(= S21 /(NF *功率))将本文介绍的LNA的性能与迄今为止文献中报道的频率可重构LNA进行了比较。与基于更先进的硅技术的LNA相比,基于此FOM提出的LNA具有更好的性能。在本文中,通过将单个变容二极管添加到发射极退化的共源共栅LNA内核的输入和输出中,获得了所有可能的配置。分析。低噪声,低功耗,输入匹配,频率可重新配置和单片实现是确定配置可接受性的主要限制。已经确定了三种可接受的配置,并且已经提出了基于这些配置的电路设计。电路是使用在这项工作中开发的方法设计的。该方法设计旨在在整个工作频率范围内且在直流功率约束下,在输入端具有良好的噪声和功率匹配。

著录项

  • 作者

    Jajoo, Abhishek.;

  • 作者单位

    Carnegie Mellon University.;

  • 授予单位 Carnegie Mellon University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2010
  • 页码 123 p.
  • 总页数 123
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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